IPB08CNE8N G

IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G ™ "%&$!"# 2 Power-Transistor Product Summary Features R ( 492 ??6= ?@ C>2 ==6G6= R I46==6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '  V ;I 0- K R  - @ ?>2 I.)     0&* Z" I; 1- 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[# R   U @ A6C2 E:?8 E6>A6C2 E FC6 R * 3 7C66 =62 5 A=2 E:?8 , @ # - 4@ >A=:2 ?E R + F2 =:7:65 2 44@ C5:?8 E@ %   )# 7@ CE2 C86E2 AA=:42 E:@ ? R$562 =7@ C9:89 7C6BF6?4J DH:E49:?8 2 ?5 DJ?49C@ ?@ FD C64E :7:42 E :@ ? R# 2 =@ 86? 7C66 2 44@ C5:?8 E@ $        Type $*     (  ( " $* $   (  ( " $* *    (  ( " Package F>%JE*.+%+ F>%JE*.*%+ F>%JE**(%+ Marking (09DA6C2 EFC6 T W T `aT T 9   U $  4=:>2 E :4 42 E68@ CJ  $( $    , 6G   Unit 7 ZA XK's` r*( K )./ L     U        A2 86       IPB08CNE8N G IPI08CNE8N G Parameter IPP08CNE8N G Values Symbol Conditions Unit min. typ. max. % % (&1  % % ,( 0- % % Thermal characteristics .96C>2 =C6D:DE2 ?46 ; F?4E:@ ? 42 D6 R aUA9 .96C>2 =C6D:DE2 ?46 ; F?4E:@ ? 2 >3 :6?E.)     .)     .)     R aUA7 >:?:>2 =7@ @ EAC:?E  4> 4@ @ =:?8 2 C62 ,# B'L Electrical characteristics, 2 ET W   U  F?=6DD @ E96CH:D6 DA64:7:65 Static characteristics  C2 :? D@ FC46 3 C62 I"aU# V ;I5V >I I ;   W  * + , 16C@ 82 E6 G@ =E2 86 5C 2 :? 4FCC6?E I ;II V ;I   /  V >I  /  T W   U % (&) ) V ;I   /  V >I  /  T W   U % )( )(( K s7 " 2 E6 D@ FC46 =62 II V >I   /  V ;I  / % ) )(( [7  C2 :? D@ FC46 @ ? DE2 E6 C6D:DE2 ?46 R ;I"\[# V >I  /  I ;     "JE*.+# % .&) 0&* Z" V >I  /  I ;     .)     .)     % .&, % )&- % " -/ ))+ % I " 2 E6 C6D:DE 2 ?46 R> J_N[`P\[QbPaN[PR g S` )# hV ;Ih6*hI ;hR ;I"\[#ZNe I ;    % - .   2 ?5 % -    *# - 66 7:8FC 6 +# . WZNe   U 2 ?5 5FEJ 4J4=6     7@ C/T`4%-K ,#  6G:46 @ ?   >> I   >> I  >> 6A@ IJ *   !,  H:E9  4>* @ ?6 =2 J6C  W>E 9:4I  /  V ;I   /  f ' # K ) FEAFE42 A2 4:E2 ?46 C \`` , 6G6CD6 EC2 ?D76C42 A2 4:E2 ?46 C _`` % .- 10 .FC? @ ? 56=2 J E:>6 t Q"\[# % )- *+ , :D6 E:>6 t_ % *, +. .FC? @ 7756=2 J E:>6 t Q"\SS# % *. +1 !2 ==E:>6 tS % . )( " 2 E6 E@ D@ FC46 492 C86 Q T` % *0 +/ " 2 E6 E@ 5C2 :? 492 C86 Q TQ % )/ *. % +( ,+ V ;;   /  V >I  /  I ;      R >  " ]= [` " 2 E6  92 CT6  92 C2 4E6C:DE :4D-# V ;;   /  I ;     V >I  E@  / [9 - H:E49:?8 492 C86 Q `d " 2 E6 492 C86 E@ E 2= QT % /- 11 " 2 E6 A=2 E62 F G@ =E 2 86 V ]YNaRNb % -&- % ) FEAFE492 C86 Q \`` % /* 1- [9 % % 1- 7 % % +0( % ) )&* % )(- % *.- V ;;   /  V >I  / K Reverse Diode  :@ 56 4@ ?E:?@ FD 7@ CH2 C5 4FCC 6?E II  :@ 56 AF=D6 4FCC 6?E I I$]bY`R  :@ 56 7@ CH2 C5 G@ =E2 86 V I; , 6G6CD6 C64@ G6CJ E:>6 t __ , 6G6CD6 C64@ G6CJ 492 C 86 Q __ -# , 6G   T 9   U V >I  /  I =     T W   U V H   /  I =5I I Qi ='Qt     W D K [` % [9 - 66 7:8FC 6  7@ C82 E6 492 C 86 A2 C2 >6E6C567:?:E :@ ? A2 86        IPB08CNE8N G IPI08CNE8N G 1 Power dissipation 2 Drain current P a\a5S"T 9# I ;5S"T 9 V >I"  / 100 160 80 120 60 I D [A] P tot [W] 200 IPP08CNE8N G 80 40 40 20 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I ;5S"V ;I T 9   U  D 5( Z aUA95S"t ]# A2 C2 >6E6C t ] A2 C2 >6E6C  D 5t ]'T 103 100 WD (&  WD 102  WD (&* I D [A] ;9 10 Z thJC [K/W] >D  >D 1 (&) 10 -1 (&((&(* (&() 100 D:?8=6 AF=D6 10-1 10 10-2 -1 10 0 10 1 10 2 V DS [V] , 6G   10-5 10-4 10-3 10-2 10-1 100 t p [s] A2 86        IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G 5 Typ. output characteristics 6 Typ. drain-source on resistance I ;5S"V ;I T W   U R ;I"\[#5S"I ; T W   U A2 C 2 >6E6C V >I A2 C2 >6E6C  V >I 350 20  /   /  /  /   /  / 300 15 250 R DS(on) [m ]   / I D [A] 200 150  / 10  /  / 100 5   / 50  /   / 0 0 0 1 2 3 4 5 0 50 V DS [V] 100 150 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I ;5S"V >I L V ;Ih6*hI ;hR ;I"\[#ZNe g S`5S"I ; T W   U A2 C 2 >6E6C T W 200 160 140 150 120 100 g fs [S] I D [A] 100   U 80 60   U 50 40 20 0 0 0 2 4 6 8 , 6G   0 40 80 120 160 I D [A] V GS [V] A2 86        IPB08CNE8N G IPI08CNE8N G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R ;I"\[#5S"T W I ;     V >I  / V >I"aU#5S"T W V >I5V ;I IPP08CNE8N G A2 C2 >6E6C  I; 20 4 3.5 15  W  3 V GS(th) [V] R DS(on) [m ]  W  2.5   10 af] 2 1.5 5 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C 5S"V ;I V >I  /  f  ' # K I =5S"V I;# A2 C2 >6E6C  TW 104 103 9V`` 9\``   U   U       U 102 I F [A] C [pF] 103   U     9_`` 102 101 101 100 0 20 40 60 80 V DS [V] , 6G   0 0.5 1 1.5 2 V SD [V] A2 86        IPB08CNE8N G IPI08CNE8N G 13 Avalanche characteristics 14 Typ. gate charge I 7I5S"t 7K R >I   " V >I5S"Q TNaR I ;    AF=D65 A2 C 2 >6E6C T W"`aN_a# A2 C2 >6E6C  V ;; 100 IPP08CNE8N G 12  / 10   U   U  / 8 V GS [V] I AS [A]   U 10  / 6 4 2 1 0 1 10 100 1000 0 20 40 60 80 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V 8H";II#5S"T W I ; > 100 V >I Qg V BR(DSS) [V] 95 90 V T `"aU# 85 80 Q T "aU# Q `d Q T` 75 -60 -20 20 60 100 140 Q g ate Q TQ 180 T j [°C] , 6G   A2 86        IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G PG-TO220-3: Outline , 6G   A2 86        IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G PG-TO262-3-1 (I²PAK) , 6G   A2 86        IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G PG-TO-263 (D²-Pak) , 6G   A2 86        IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. , 6G   A2 86